SiGe and Si FinFET Structures and Methods for Making the Same

ABSTRACT

FinFET structures and methods for making the same. A method includes: creating a plurality of Silicon fins on a first region of a substrate, creating a plurality of Silicon-Germanium fins on a second region of the substrate, adjusting a Silicon fin pitch of the plurality of Silicon fins to a predetermined value, and adjusting a Silicon-Germanium fin pitch of the plurality of Silicon-Germanium fins to a predetermined value, where the creating steps are performed in a manner that Silicon material and Silicon-Germanium material used in making the plurality of fins will be on the semiconductor structure at a same time.

BACKROUND

The present application relates to a semiconductor structure and amethod of forming the same. More particularly, the present applicationrelates to a FinFET device and a method for making the same.

For more than three decades, the continued miniaturization of metaloxide semiconductor field effect transistors (MOSFETs) has driven theworldwide semiconductor industry. Various showstoppers to continuedscaling have been predicated for decades, but a history of innovationhas sustained Moore's Law in spite of many challenges. However, thereare growing signs today that metal oxide semiconductor transistors arebeginning to reach their traditional scaling limits. Since it has becomeincreasingly difficult to improve MOSFETs and therefore complementarymetal oxide semiconductor (CMOS) performance through continued scaling,further methods for improving performance in addition to scaling havebecome critical.

The use of non-planar semiconductor devices such as, for example,semiconductor fin field effect transistors (FinFETs), is the next stepin the evolution of CMOS devices. FinFETs are non-planar semiconductordevices which include at least one semiconductor fin protruding from asurface of a substrate. A gate dielectric can be formed in directphysical contact with each vertical sidewall of the at least onesemiconductor fin and, optionally, in direct physical contact with atopmost surface of the semiconductor fin. A gate conductor can be formedon the gate dielectric and straddling a portion of the at least onesemiconductor fin. FinFETs can increase the on-current per unit arearelative to planar field effect transistors.

As such, there is a need to improve FinFET devices and methods formaking the same.

SUMMARY

One aspect of the invention includes a FinFET structure. The FinFETstructure includes: a first region on a substrate, a second region onthe substrate, a plurality of Silicon fins, with a same Silicon finpitch, on the first region of the substrate, and a plurality ofSilicon-Germanium fins, with a same Silicon-Germanium fin pitch, on thesecond region of the substrate, where the Silicon-Germanium fins aretall and have a high Germanium concentration.

Another aspect of the invention includes a method for making a FinFETstructure. The method includes: creating a plurality of Silicon fins ona first region of a substrate, creating a plurality of Silicon-Germaniumfins on a second region of the substrate, adjusting a Silicon fin pitchof the plurality of Silicon fins to a predetermined value, and adjustinga Silicon-Germanium fin pitch of the plurality of Silicon-Germanium finsto a predetermined value, where the Silicon-Germanium fins are tall andhave a high Germanium concentration.

Yet another aspect of the invention includes a method for making aFinFET structure. The method includes: creating a plurality of Siliconfins on a first region of a substrate, creating a plurality ofSilicon-Germanium fins on a second region of the substrate, adjusting aSilicon fin pitch of the plurality of Silicon fins to a predeterminedvalue, and adjusting a Silicon-Germanium fin pitch of the plurality ofSilicon-Germanium fins to a predetermined value, where the creatingsteps are performed in a manner that Silicon material andSilicon-Germanium material used in making the plurality of fins will beon the semiconductor structure at a same time.

Yet another aspect of the invention includes a structure that can beused to make a Fin-FET device. The structure includes: a first region ona substrate, a second region on the substrate, and Silicon-Germanium andSilicon material located in both the first and second region, where theSilicon-Germanium and Silicon material is segmented such that spacingbetween each segment is the same.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 illustrates an initial semiconductor structure that can be usedto implement aspects of the present disclosure.

FIG. 2 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 3 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 4 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 5 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 6 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 7 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 8 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 9 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 10 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 11 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 12 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 13 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

FIG. 14 illustrates a semiconductor structure in accordance with anembodiment of the present invention.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes and, as such, theyare not drawn to scale. In the drawings and description that follows,like elements are described and referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide a thoroughunderstanding of the present application. However, it will beappreciated by one of ordinary skill in the art that the presentapplication may be practiced with viable alternative process optionswithout these specific details. In other instances, well-knownstructures or processing steps have not been described in detail inorder to avoid obscuring the various embodiments of the presentapplication.

The various embodiments of the disclosure describe a structure andmethod for permitting the formation of at least two regions on a device,such as an n-FET and p-FET region on a semiconductor device, where oneof the n-FET and p-FET regions can have a plurality of fins composed ofSilicon-Germanium, and the other can have a plurality of fins composedof Silicon. The Silicon and Silicon-Germanium material can be laid downand formed into a plurality of fins, where each of the Silicon andSilicon-Germanium material is associated with a respective region, on abulk substrate with a minimal number of process steps. Furthermore, themethod and structure are beneficial for a variety of fin dimensions, butare particularly beneficial for devices with fins that are 12 nm or lessin thickness and/or have fin pitch equal to or less than 24 nm. Forexample, 10 nm in thickness and a 20 nm fin pitch. Furthermore, withrespect to the Silicon-Germanium fins, several embodiments of thepresent disclosure facilitate the ability o create Silicon-Germaniumfins that are less than or equal to 12 nm in width, greater than orequal to 50 nm in height, and with a Germanium concentration greaterthan or equal to 25% Germanium. Additionally, the method and structuremake it possible for each of the p-FET region fins to have an equalspacing and fin pitch between and among themselves, and the same foreach of the n-FET region fins; however, the fin pitch and fin spacing ofthe n-FET fins and p-FET fins can be different.

Referring first to FIG. 1, there is illustrated a device, which includesfrom top to bottom, a bulk Silicon substrate 10 and a plurality of fins15 dispersed thereon. The plurality of fins can be made of Silicon or anequivalent material. In some embodiments of the present application, thebulk substrate 10 can be a semiconductor material, where the term“semiconductor” as used herein in connection with the semiconductormaterial of the bulk substrate 10 denotes any semiconducting materialincluding, for example, Si, Ge, Silicon-Germanium, SiC,Silicon-Germanium-carbon, InAs, GaAs, InP or other like III/V compoundsemiconductors. Multilayers of these semiconductor materials can also beused. In one embodiment, the bulk substrate 10 is silicon.

In some embodiments, the bulk substrate 10 can have the crystalorientation of {100}, {110}, or {111}. Other crystallographicorientations besides those specifically mentioned can also be used inthe present application. The bulk substrate 10 can be a singlecrystalline semiconductor material, a polycrystalline material, or anamorphous material. In some embodiments, the bulk substrate 10 can beprocessed to include semiconductor regions having different crystalorientations.

As stated, the bulk Silicon substrate 10 can be any of the materialsoutlined above, and other equivalents. In one embodiment, as shown inFIG. 1, a bulk Silicon wafer is used to form both of the bulk Siliconsubstrate 10 and the plurality of fins 15. The methods and steps tocreate a bulk Silicon substrate 10 and a plurality of fins 15 from abulk silicon wafer are known in the art and will not be delved intogreat detail herein.

Referring to FIG. 2, Silicon-Germanium material 20 fills the spaces inbetween the plurality of the Silicon fins. The fill-in can happen byepitaxially growing the Silicon-Germanium from the bottom up. Generally,epitaxial growth, grown, deposition, formation, process etc. means thegrowth of a semiconductor material on a deposition surface of asemiconductor material, in which the semiconductor material being grownhas the same crystalline characteristics as the semiconductor materialof the deposition surface. In an epitaxial deposition process, thechemical reactants provided by the source gasses are controlled and thesystem parameters are set so that the depositing atoms arrive at thedeposition surface of the semiconductor substrate with sufficient energyto move around on the surface and orient themselves to the crystalarrangement of the atoms of the deposition surface. Therefore, anepitaxial semiconductor material has the same crystallinecharacteristics as the deposition surface on which it is formed. Forexample, an epitaxial semiconductor material deposited on a <100>crystal surface will take on a <100> orientation. In some embodiments,epitaxial growth and/or deposition processes are selective to forming onsemiconductor surface, and do not deposit material on dielectricsurfaces, such as silicon dioxide or silicon nitride surfaces.

Examples of various epitaxial growth process apparatuses that aresuitable for use in forming epitaxial semiconductor material of thepresent application include, e.g., rapid thermal chemical vapordeposition (RTCVD), low-energy plasma deposition (LEPD), ultra-highvacuum chemical vapor deposition (UHVCVD), atmospheric pressure chemicalvapor deposition (APCVD) and molecular beam epitaxy (MBE). Thetemperature for epitaxial deposition process for forming the carbondoped epitaxial semiconductor material typically ranges from 550° C. to900° C. Although higher temperature typically results in fasterdeposition, the faster deposition may result in crystal defects and filmcracking.

Additional steps will be described for portions of the bulk substrate 10designated an n-FET region and as a p-FET region. As already stated andimplied, these steps do not need to be done in any particular order; forexample, those associated with the n-FET region can be done first andthose associated with the p-FET region can be done second, andvisa-versa. Since the bulk Silicon and Silicon-Germanium materialnecessary to form the respective fins for each region is on the samedevice at the same time, the thinning steps outlined in below (shown inFIG. 4 and FIG. 6) can be done at the same time, even though theindividual thinning or etch rate and the actual trimmed/thinned amountcan vary between the regions. It should be noted that the Siliconmaterial which forms the plurality of fins 15 and the material that willform a plurality of Silicon-Germanium fins 20 (discussed below) can beon the bulk substrate 10 at the same time. It should be further statedthe Germanium concentration of any one of the Silicon-Germanium fins 20can be varied by epitaxial growth conditions and process gas flow, andthe concentration can be 10%-80% Germanium.

The spacing in between the plurality of Silicon fins 15 can be the same,and by extension the fin pitch associated with the plurality of Siliconfins 15 will also be the same. This will also ensure that the spacingbetween Silicon fins 15 and Silicon Germanium fins 20 can be the samesince the Silicon-Germanium material that will form theSilicon-Germanium fins 20 will be deposited in those equally spacedspaces. The equal spacing can be accomplished by sidewall image transferand other known techniques in the art when the Silicon fins 15 areformed on the bulk substrate 10.

Accordingly, FIG. 3 shows additional process steps with respect to thep-FET region of the bulk substrate 10. The material that is theplurality of Silicon fins 15 is removed. The removal can be done by anetch process, such as a selective etch process, which removes theSilicon fins 15 but not the material that can form the Silicon-Germaniumfins 20. An example of an etchant that can enable this process isAmmonia. The result will be that the Silicon-Germanium material 20 willbe a plurality of Silicon-Germanium fins 20. Since the plurality ofSilicon fins 15, and by extension the material forming the same, wereformed in a manner such that they had a same fin pitch and fin spacingbetween them, the plurality of Silicon-Germanium fins 20 will also havea same fin pitch and fin spacing.

FIG. 4 shows another embodiment of the present disclosure, where any oneof the plurality of Silicon-Germanium fins 20 can be thinned by a fintrimming process, such as for example, thermal oxidation followed by anetch employing hydro-fluoric acid, or an etch employing hydrochloricacid in an epitaxial reactor, resulting in thinner Silicon-Germaniumfins 21.

Referring to FIG. 5, additional process steps with respect to the n-FETregion of the bulk substrate 10 are shown. The Silicon-Germaniummaterial 20 is removed. The removal can be done by a selective etchprocess, which removes the Silicon-Germanium material that can form theSilicon-Germanium fins 20 but not the Silicon fins 15 and the materialforming the same. One example for an etchant that can used for thisprocess is TMAH (Tetramethylammonium hydroxide). The result will be thatthe plurality of Silicon fins 15 will remain for the n-FET region. Sincethe plurality of Silicon fins 15, and by extension the material formingthe same, were formed in a manner such that they had a same fin pitchand fin spacing between them, after the Silicon-Germanium material 20 isremoved, the plurality of Silicon fins 15 will retain a same fin spacingand fin pitch between them.

FIG. 6 shows another embodiment of the present disclosure, where any oneof the plurality of Silicon fins 15 can be thinned by a fin trimmingprocess, such as, for example, oxidation followed by an etch employinghydro-fluoric acid, or etching using gaseous hydrochloric acid in anepitaxial reactor.

As stated, the thinning steps shown in FIG. 4 and FIG. 6 can beperformed at the same time for the separate portions of the device, i.e.the plurality of Silicon fins 15 in the n-FET region and the pluralityof Silicon-Germanium fins 20 in the p-FET region.

It should be stated that it is possible to reverse the materialcomposition of the fins in the n-FET region and the p-FET region, i.e.Silicon-Germanium fins for the former and Silicon fins for the latter.This does not depart from the teachings and steps described above.

Thus, by having the material necessary to form both of the plurality offins in the n-FET region 15 and the plurality of fins in the p-FETregion 20 on the bulk substrate 10 at the same time, distinct advantagesare obtained over prior art techniques. For example, by having theSilicon material 15 surrounding the Silicon Germanium material, you canhave taller fins with higher Germanium concentration. Specifically,“tall” means you can have Silicon-Germanium fins that are around 50 nmin height or exceed 50 nm in height. This includes fins between 50 nm-60nm in height. A “high Germanium concentration” means a Germaniumconcentration that is around 25%. This includes a Germaniumconcentration that is greater than or equal to 25% Germanium. Thus, itis possible to have fins that are greater than or equal to 50 nm inheight with a Germanium concentration greater than or equal to 25%.Prior art techniques cannot achieve this result because they involvecutting the Silicon-Germanium fins with higher Germanium concentrationsdue to problems imposed by critical thickness and/or critical volume,which decreases as the percentage of Germanium increases.

The present teachings will alleviate the problems imposed by thedecreasing critical thickness and/or critical volume as a general modelbecause the Silicon material holds the Silicon-Germanium in place.However, the teachings herein can have increased benefit for smallerdimensions. In one particular embodiment, where the fin spacing betweeneach fin of the plurality of Silicon fins 15, and the material formingthe same, and/or each fin of the plurality of Silicon-Germanium fins 20is between 10 nm-20 nm, and more particularly less than or equal to 10nm, and with a fin pitch of the Silicon fins 15 and/or theSilicon-Germanium fins 20 being between 20 nm-40 nm, and moreparticularly for a fin pitch less than or equal to 20 nm, i.e. 20 nm, 16nm, etc., and with the fin width being less than or equal to 10 nm, i.e.10 nm, 8 nm, etc., a critical advantage is offered over the prior art inthat the tightness of the spacing for these dimensions has the capacityto even further hold the Silicon-Germanium in place in the context oftall fins with high Germanium concentration. Moreover, with respect tothe Silicon fins 15, the aforementioned dimensions have the inherentadvantage of having fully-depleted Silicon fins, and all of theadvantages associated therewith, while also permitting the benefitsoutlined above.

Referring now to FIG. 7, another embodiment of the present disclosure isshown. At least one hard-mask 35 is applied to the structure of FIG. 2for the section of the bulk substrate 10 associated with a p-FET region.The purpose of the hard-mask 35 is to modify, i.e. relax or increase,the pitch between the resultant plurality of Silicon-Germanium fins 20associated with the p-FET region of the device. A hard-mask 35 is placedover every other one of the material that will form the plurality ofSilicon-Germanium fins 20. Furthermore, as shown, the hard-mask 35 cancover portions of the material that can form the plurality of Siliconfins 15, which surround the covered Silicon-Germanium material 20. Theexposed Silicon-Germanium material 20, i.e. the portions uncovered bythe one or more hard-mask 35, as shown in FIG. 8, can be removed. Theremoval can be done by an selective etch process, which removes theexposed material that can form the Silicon-Germanium fins 20 but not thecovered material that can form the Silicon-Germanium fins 20 nor thecovered material that can form the Silicon fins 15. One example for anetchant that can used for this process is TMAH (Tetramethylammoniumhydroxide). The one or more hard mask 35 can be made of silicon nitride.

Referring now to FIG. 9, another embodiment of the present disclosure isshown. The at least one hard mask 35 is removed from each of the coveredSilicon-Germanium material 20. The removal can be done by an etchingprocess, such as a timed wet etch step. A non-limiting example for a wetetch is applying hot phosphoric acid to the hard mask. Referring to FIG.10, the remaining Silicon material 15 that can compose the Silicon fins15 is removed. The removal can be done by an etch process, such as aselective etch process, which removes the material that can form theSilicon fins 15 but not the material that can form the Silicon-Germaniumfins 20. An example of an etchant that can enable this process isAmmonia. The result is a plurality of Silicon-Germanium fins 20 with arelaxed or increased pitch and wider spacing in between each of theSilicon-Germanium fins 20.

Thus, by having the material necessary to form both of the plurality offins in the n-FET region 15 and the plurality of fins in the p-FETregion 20 on the bulk substrate 10 at the same time, and applying thefin-pitch relaxing steps show in FIGS. 7-10, as discussed above, adistinct advantage is obtained over prior art techniques. For example, atighter pitch can be suitable for a high performance application and amore relaxed pitch can be made for an SRAM or similar application. Sincethis technique does not need to be applied to both regions of a device,it is possible to have a region with a tighter pitch and a region with amore relaxed pitch, which offers an advantage in inherent flexibility.

Moreover, the advantage regarding critical thickness/critical volume,which was outlined above, remains in the present context. For example,as previously stated, by having the Silicon material 15 surrounding theSilicon Germanium material, you can have taller fins with higherGermanium concentration. Specifically, “tall” means you can haveSilicon-Germanium fins that are around 50 nm in height or exceed 50 nmin height. This includes fins between 50 nm-60 nm in height. A “highGermanium concentration” means a Germanium concentration that is around25%. A “high Germanium concentration” means a Germanium concentrationthat is around 25%. This includes a Germanium concentration that isgreater than or equal to 25% Germanium. Thus, it is possible to havefins that are greater than or equal to 50 nm in height with a Germaniumconcentration greater than or equal to 25%. Prior art techniques cannotachieve this result because they involve cutting the Silicon-Germaniumfins with higher Germanium concentrations due to problems imposed bycritical thickness and/or critical volume, which decreases as thepercentage of Germanium increases. Also, applying the pitch variationtechnique above provides the benefits stated, in addition to advantagesthat are inherent to flexibility with respect to pitch adjustment, whileretaining the benefit of addressing the critical thickness/criticalvolume problem.

As stated, the present teachings will alleviate the problems imposed bythe decreasing critical thickness and/or critical volume as a generalmodel because the Silicon material holds the Silicon-Germanium in place;and if applied, the pitch adjustment techniques offer additionaladvantages, such as advantages that are inherent in more flexibilitywith respect to pitch adjustment. However, the teachings herein can haveincreased benefit for smaller dimensions. In one particular embodiment,where the fin spacing between each fin of the plurality of Silicon fins15 and/or each fin of the plurality of Silicon-Germanium fins 20 isbetween 10nm-20 nm, and more particularly less than or equal to 10 nm,and with a fin pitch of the Silicon fins 15 and/or the Silicon-Germaniumfins 20 being between 20 nm-40 nm, and more particularly for a fin pitchless than or equal to 20 nm, i.e. 20 nm, 16 nm, etc., and with the finwidth being less than or equal to 10 nm, i.e. 10 nm, 8 nm, etc., acritical advantage is offered over the prior art in that the tightnessof the spacing for these dimensions has the capacity to even furtherhold the Silicon-Germanium in place in the context of tall fins withhigh Germanium concentration. Moreover, with respect to the Silicon fins15, whose associated fin-adjustment steps are discussed below, theaforementioned dimensions have the inherent advantage of havingfully-depleted Silicon fins, and all of the advantages associatedtherewith, while also permitting the benefits outlined above.

It should be further stated that since the Silicon-Germanium fins can beformed prior to fin-adjustment, when a tight fin-pitch is required, i.e.20 nm for 10 nm wide fins with a 10 nm spacing, the benefit of enablinga taller fin with higher Germanium concentration will not be compromisedbecause the Silicon-Germanium fin formation occurs prior to pitchadjustment. For example, a resulting adjusted fin pitch of 40 nm couldhave been preceded by a 20 nm pitch, prior to adjustment, where theSilicon-Germanium fins could have been formed when the pitch was 20 nm,(again, prior to adjustment).

It should be further noted that the above description shows that themethod described above permits adjusting a fin-pitch associated withfins in a particular region in a FinFET device. Moreover, the abovedescription shows that same-fin pitch and fin spacing is preserved forthe resulting Silicon-Germanium fins 20 because the spacing between theplurality of Silicon-Germanium fins 20 is unaffected by removing theSilicon material 15. Although the above example is for Silicon-Germaniumfins 20 of a p-FET region, the techniques described herein can apply toother regions of a FinFET.

Referring now to FIG. 11, another embodiment of the present disclosureis shown. At least one hard-mask 35 is applied to the structure of FIG.2 for the section of the bulk substrate 10 associated with a n-FETregion. The purpose of the hard-mask 35 is to modify, i.e. relax orincrease, the pitch between the resultant plurality of Silicon fins 15associated with the n-FET region of the device. A hard-mask 35 is placedover every other one of the material that can form the plurality ofSilicon fins 15. Furthermore, as shown, the hard-mask 35 can coverportions of the material that can form the plurality ofSilicon-Germanium fins 20, which surround the covered Silicon material15. The exposed Silicon material 15, i.e. the portions uncovered by theone or more hard-mask 35, as shown in FIG. 12, can be removed. Theremoval can be done by an etch process, such as a selective etchprocess, which removes the uncovered material that can form the Siliconfins 15 but not the covered material that can form the Silicon fins 15nor the covered material that can form the Silicon-Germanium fins 20. Anexample of an etchant that can enable this process is Ammonia. The oneor more hard mask 35 can be made of silicon nitride.

Referring now to FIG. 13, another embodiment of the present disclosureis shown. The at least one hard mask 35 is removed from each of thecovered Silicon material 15. The removal can be done by an etchingprocess, such as a timed wet etch step. A non-limiting example for a wetetch is applying hot phosphoric acid to the hard mask. Referring to FIG.14, the remaining Silicon-Germanium material 20 is removed. The removalcan be done by a selective etch process, which removes the material thatcan form Silicon-Germanium fins 20 but not the material that can formthe Silicon fins 15. One example for an etchant that can used for thisprocess is TMAH (Tetramethylammonium hydroxide). The result is aplurality of Silicon fins 15 with a relaxed pitch and spacing in betweeneach of the Silicon fins 15.

Thus, by having the material necessary to form both of the plurality offins in the n-FET region 15 and the plurality of fins in the p-FETregion 20 on the bulk substrate 10 at the same time, and applying thefin-pitch adjustment steps show in FIGS. 11-14, as discussed above, adistinct advantage is obtained over prior art techniques. Specifically,applying the fin-adjustment techniques to the n-FET region, the p-FETregion, or both, as stated, can, for example, provide a tighter pitch besuitable for a high performance application and a more relaxed pitch canbe made for an SRAM or similar application. Since this technique doesnot need to be applied to both regions of a device, it is possible tohave a region with a tighter pitch and a region with a more relaxedpitch, which offers an advantage in inherent flexibility.

Moreover, as stated, there are advantages inherent to being able toadjust fin-pitch in a given region. Additionally, developing the n-FETregion, with or without the fin pitch adjustment techniques, addressesthe issue with the Silicon-Germanium fins 20 while also permitting theSilicon-fins 15 to be developed for the n-fet region. Thus, thefin-adjustment technique can be applied to the n-FET region in a mannerthat does not eliminate the ability to address the criticalthickness/critical volume problem associated with the Silicon-Germaniumfins, while also being able to form Silicon fins for an n-FET region.

As stated with discussion to fin-adjustment of the p-FET region, thedimensions can be such that the fin spacing between each fin of theplurality of Silicon fins 15 and/or each fin of the plurality ofSilicon-Germanium fins 20 is between 10 nm-20 nm, and more particularlyless than or equal to 10 nm, and with a fin pitch of the Silicon fins 15and/or the Silicon-Germanium fins 20 being between 20 nm-40 nm, and moreparticularly for a fin pitch less than or equal to 20 nm, i.e. 20 nm, 16nm, etc., and with the fin width being less than or equal to 10 nm, i.e.10 nm, 8 nm, etc. As also stated, with respect to the Silicon fins 15,the aforementioned dimensions have the inherent advantage of havingfully-depleted Silicon fins, and all of the advantages associatedtherewith, while also permitting the benefits outlined above.

It should be noted that the above description shows that the methoddescribed above permits adjusting a fin-pitch associated with fins in aparticular region in a FinFET device. Although the above example is forSilicon fins 15 of an n-FET region, the techniques described herein canapply to other regions of a FinFET.

Finally, as implied, in one embodiment of the present disclosure, it ispossible to apply the pitch-relaxing/increasing techniques described inFIGS. 7-14 to only one region, i.e. for example, the steps described forFIGS. 7-10 for the p-FET region without performing the steps describedfor FIGS. 11-14 for the n-FET region, or visa versa. The result will bethat for fins in a given region the fin pitch and fin spacing will bethe same, but the fin pitch and fin spacing of that given region will bedifferent from that of the other region, i.e., for example, one regioncan have a fin spacing of 10 nm and a fin pitch of 20 nm, and the otherregion can have a fin spacing of 20 nm and a fin pitch of 40 nm. Asstated, this is beneficial because the benefit of addressing thecritical thickness/critical volume issue remains intact, while alsooffering advantages that are inherent in being able to adjust fin pitchin one region and not the other, such as having, on the same device, ahigh performance region with a tight pitch and an SRAM region with amore relaxed pitch.

While the present application has been particularly shown and describedwith respect to various embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A structure comprising: a first region on a substrate; a second region on the substrate; a plurality of Silicon fins, with a same Silicon fin pitch, on the first region of the substrate; and a plurality of Silicon-Germanium fins, with a same Silicon-Germanium fin pitch, on the second region of the substrate, wherein the Silicon-Germanium fins are tall and have a high Germanium concentration.
 2. The structure according to claim 1, wherein the same Silicon fin pitch is between 20 nm and 40 nm.
 3. The structure according to claim 2, wherein the same Silicon-Germanium fin pitch is between 20 nm and 40 nm.
 4. The structure according to claim 1, wherein the same Silicon fin pitch is different than the same Silicon-Germanium fin pitch.
 5. The structure according to claim 3, wherein the same Silicon fin pitch and the same Silicon-Germanium fin pitch are equal.
 6. The structure according to claim 3, wherein the plurality of Silicon fins and the plurality of Silicon-Germanium fins are less than or equal to 10 nm in width.
 7. The structure according to claim 6, wherein one of i) the same Silicon-Germanium fin pitch and ii) the same Silicon fin pitch is 20 nm and the other is 40 nm.
 8. The structure according to claim 6, wherein both the same Silicon-Germanium fin pitch and the same Silicon fin pitch are 20 nm.
 9. The structure according to claim 4, wherein at least two fins of the plurality of Silicon-Germanium fins have a different concentration of Ge.
 10. A structure comprising: a first region on a substrate; a second region on the substrate; and Silicon-Germanium and Silicon material located in both the first and second region, wherein the Silicon-Germanium and Silicon material is segmented such that spacing between each segment is the same.
 11. The structure according to claim 1, wherein the first region is a p-FET region and the second region is an n-FET region, wherein the fin spacing between plurality of fins in both regions is 10 nm, wherein the fin-pitch of the plurality of fins in both regions is 20 nm, and wherein the width of the plurality of fins in both regions is 10 nm. 